PART |
Description |
Maker |
K4H510738E-TC_LB0 K4H510638E-TC_LA2 K4H510638E-TC_ |
Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)
|
SAMSUNG[Samsung semiconductor]
|
HYS64D64020GU-7-B HYS64D64320GU-5-B HYS64D64320GU- |
DDR SDRAM Modules - 512MB (64Mx64) PC2100 2-bank DDR SDRAM Modules - 512MB (64Mx64) PC3200 2-bank DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank DDR SDRAM Modules - 256MB (32Mx64) PC2700 1-bank DDR SDRAM Modules - 256MB (32Mx72) PC2700 2-bank DDR SDRAM Modules - 512MB (64Mx72) PC2700 2-bank DDR SDRAM Modules - 512MB (32Mx72) PC2100 2-bank DDR SDRAM Modules - 128MB (16Mx64) PC2100 1-bank DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank 184-Pin Unbuffered Dual-In-Line Memory Modules DDR SDRAM Modules - 256MB (32Mx64) PC2100 1-bank DDR SDRAM Modules - 128MB (16Mx64) PC3200 1-bank DDR SDRAM Modules - 512MB (64Mx72) PC3200 2-bank DDR SDRAM Modules - 256MB (32Mx64) PC3200 1-bank DDR SDRAM Modules - 256MB (32Mx72) PC3200 2-bank
|
Infineon
|
M470L6423CK0 |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
M470L6423CK0 |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
|
SAMSUNG[Samsung semiconductor]
|
K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片(了x4,x8 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125 256Mb E-die DDR SDRAM Specification 66 TSOP-II Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
HYS72D128521GR-7-B HYS72D64500GR-8-B HYS72D128520G |
DDR SDRAM Modules - 512MB (64Mx72) PC2100 1-bank DDR SDRAM Modules - 1GB (128Mx72) PC2100 1-bank DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank 256 MB 32M x 72 PC2100 Registered DIM... DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-2-2 2-bank Registered DDR SDRAM-Modules Low Profile Registered DDR-I SDRAM-Modules
|
INFINEON[Infineon Technologies AG]
|
W3EG6462S403D3 |
512MB - 2x32Mx64 DDR SDRAM UNBUFFERED 512MB 2x32Mx64 DDR SDRAM内存缓冲
|
NanoAmp Solutions, Inc.
|
EBE52UC8AAFV EBE52UC8AAFV-AE-E EBE52UC8AAFV-BE-E E |
512MB Unbuffered DDR2 SDRAM HYPER DIMM垄芒 512MB Unbuffered DDR2 SDRAM HYPER DIMM?/a> 128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240
|
ELPIDA MEMORY INC
|
K4T51043Q K4T51043QB-GCCC K4T51043QB-GCD5 K4T51043 |
512Mb B-die DDR2 SDRAM
|
Samsung semiconductor
|
K4T51163QB K4T51163QB-GCCC K4T51163QB-GCD5 K4T5116 |
512Mb B-die DDR2 SDRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K4T51163QC-ZCCC K4T51163QC-ZCD5 K4T51163QC-ZCD6 K4 |
512Mb C-die DDR2 SDRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|